image processing package digitalmicrograph software (Gatan Inc)
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Gatan Inc
image processing package digitalmicrograph software
Image Processing Package Digitalmicrograph Software, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 97/100, based on 12074 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/image+processing+package+digitalmicrograph/DigitalMicrograph+Software/10__1007_slash_s10338___018___0021___y-99-24-29
Average 97 stars, based on 12074 article reviews
Image Processing Package Digitalmicrograph Software, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 97/100, based on 12074 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/image+processing+package+digitalmicrograph/DigitalMicrograph+Software/10__1007_slash_s10338___018___0021___y-99-24-29
Average 97 stars, based on 12074 article reviews
image processing package digitalmicrograph software - by Bioz Stars,
2026-10
97/100 stars
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Software:Article Title: Strain measurements in s-Si/SiGe nanostructures by quantitative high-resolution electron microscopy Article Snippet: We have studied tensile-strained Si (s-Si) layers grown on nearly fully relaxed Si1-xGex virtual substrates (VS) by high-resolution transmission electron microscopy (HRTEM).. Aberration-corrected HRTEM coupled with geometric phase analysis (GPA) provides precise strain values.. Measurements and finite element method simulations lead to the conclusion that the strain state of the s-Si layer depends only on the Ge content of the VS underneath (x = 20, 30, 40 or 50%) but not on the layer thickness (between 5 and 37 nm). Article Title: Strain mapping of LED devices by dark-field inline electron holography: comparison between deterministic and iterative phase retrieval approaches. Article Snippet: Dark-field inline electron holography has recently been established as a convenient method to map strain in semiconductor devices, combining high precision, low noise, sub-nm spatial resolution and fields-of-view larger than 1 mm.. Here we compare two approaches to reconstruct the geometric phase from a transmission electron microscopy dark-field focal series and their effects on the strain measurement: the transport-of-intensity-equation (TIE) and a flux-preserving iterative approach.. For this task, we used a GaN-based light emitting diode with a highly complex heterostructure as a model system. Article Title: Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy Article Snippet: .. Strain mapping was performed using GPA Phase software (HREM Research Inc.) a plug-in for the Article Title: Strain in Hydrogen-Implanted Si Investigated Using Dark-Field Electron Holography Article Snippet: This content has been downloaded from IOPscience.. Please scroll down to see the full text.. Download details: IP Address: 129.219.247.33 |